Abstract

A deep insight into the fundamental physical processes in diamond irradiated with intense, ultrashort laser pulses is of paramount importance to optimize the fabrication of diamond sensors and dosimeters.A review of the present state of the art of experimental and theoretical studies on this topic is presented by T. Apostolova et. al. The work also gives a comprehensive picture of the experimental laser technology used for innovative diamond devices. Due to its large bandgap, diamond can host a number of inter-bandgap states which can be tailored for quantum technologies. These can be color centers for single-photon emission (S. lagomarsino et al.), temperature or ultra-weak magnetic field sensors (N. Fabbri et al.). Quantum control and the capability of full deterministic implantation/activation of single emitters are the issue to be addressed. All these applications which are within reach in the near future, will undoubtedly benefit of the continuous progress of CVD diamond synthesis.

Highlights

  • Specialty section: This article was submitted to Radiation Detectors and Imaging, a section of the journal Frontiers in Physics

  • Synthesis of diamond by Chemical Vapour Deposition (CVD) was achieved already in the 60s, but applications became viable only in the 80–90s due to a significant improvement of the technique in which the substrate temperature was decoupled from the gas phase temperature leading to an increase of orders of magnitude in growth rates [1]

  • The CVD technique offered a superior control of the purity of the material with respect to natural and High-Pressure High-Temperature synthetic diamond, in particular limiting to atomic ppb the unwanted inclusion of substitutional N and N aggregates which severely deteriorate the electronic properties of the material

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Summary

Introduction

Specialty section: This article was submitted to Radiation Detectors and Imaging, a section of the journal Frontiers in Physics. The Physics of Diamond and its Technological Applications The CVD technique offered a superior control of the purity of the material with respect to natural and High-Pressure High-Temperature synthetic diamond, in particular limiting to atomic ppb the unwanted inclusion of substitutional N and N aggregates which severely deteriorate the electronic properties of the material.

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