Editorial: Noise in devices and circuits

Abstract

This Special Section is on 'Noise in devices and circuits' and contains expanded versions of a number of articles that were presented at the SPIE Fluctuations and Noise Symposium - Noise in Devices and Circuits, Santa Fe, New Mexico in June 2003 and were published in Proceedings of the SPIE, volume 5113. The papers in the Special Section are in the broad area of noise in devices and circuits and cover fundamental as well as applied aspects of noise in a variety of semiconductor devices. They are representative of the range of studies in noise from different groups around the world. This Special Section contains papers in silicon diodes, MOS and bipolar transistors, silicon germanium and compound semiconductor transistors, bulk and SOI MOS transistors, polymer transistors, low frequency noise and jitter in electronic oscillators, and the impact of scaling on noise in silicon devices. It covers theory, technology and practical aspects of noise in electronic devices and circuits and will be useful to experts as well as new researchers in the noise field.