Editorial 2020 Electron Devices Society George E. Smith Award

Abstract

It is my great pleasure to announce the winner of the 2020 Electron Devices Society George E. Smith Award given to a paper published in IEEE Electron Device Letters in 2020. The selection was made by vote of EDL’s Editors. The letter is titled “Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors” and it is authored by Arnout Beckers, Farzan Jazaeri, and Christian Enz, all with the Integrated Circuits Laboratory (ICLAB), Ecole Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland. The letter was published in the February 2020 issue of EDL.