Abstract
This paper presents the edge Transient Current Technique (eTCT) measurements of passive test-structures on the UKRI-MPW0 pixel chip, a 280 µm thick proof-of-concept High Voltage-CMOS (HV-CMOS) device designed and fabricated in the LFoundry 150 nm technology node with a nominal substrate resistivity of 1.9 kΩ cm. Samples were irradiated up to 1 × 1016 1 MeV neq cm−2 with neutrons to observe the change in depletion depth and effective doping concentration with irradiation. A depletion depth of the sensor was found to be ≈50 µm at ≈−400 V at 1 × 1016 1 MeV neq cm−2. A stable damage introduction rate (g c ) was also calculated to be 0.011 ± 0.002 cm−1.
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