Edge tailored MgO nanoribbon for negative differential resistance/nanointerconnect applications

Abstract

The electronic and transport characteristics of selective edge hydrogenated MgO nanoribbons (MgONRs) are investigated using non-equilibrium Green’s function (NEGF) in combination with density functional theory (DFT). The selective edge hydrogenation influences the stability of nanoribbons with bare MgONR (BMgOB) being the most stable structure while the bare O-edge MgONR (HMgOB) is the least stable structure. Irrespective of edge passivation, all the structures are metallic in nature. The transport calculations reveal that the bare Mg-edge (BMgOH) nanoribbon exhibits ohmic current behavior while the other nanoribbons exhibit negative differential resistance (NDR) behavior. The HMgOB device exhibits a significant NDR behavior with a significantly high peak-to-valley current ratio (PVCR) of about 3.07 × 106. Further, the BMgOH device is explored extensively for nanointerconnect performance. The transmission eigenstates illustrate the bare Mg-edge atoms contribute to the flow of carriers in BMgOH device. The parasitic components of the BMgOH device such as quantum capacitance (CQ), kinetic inductance (LK), and quantum resistance (RQ) are measured to be 3.59 fF/μm, 37.50 nH/μm, 6.46 kΩ, respectively. In addition, the BMgOH interconnects are stable and have excellent delay (τ), power delay product (PDP), and frequency response over copper interconnects. In addition to line resistance and capacitance, crosstalk is proven to degrade the interconnect performance. The obtained findings suggest that the MgONRs can be potentially used to design nanointerconnects and NDR based nanoelectronic device design by tailoring the edge hydrogenation.