Abstract
We propose and analyze a new type of edge quantum wire structure (EQWR), where an n-type AlGaAs layer is deposited on the edge plane of a GaAs/AlGaAs n–i–p–i structure where acceptors and donors are planar-doped at the center of GaAs and AlGaAs layers, respectively. Since a sharp electric field generated by the sheet doping raises the potential at the center of GaAs layer, electrons supplied by extra donors in the overgrown AlGaAs layer are driven to the two corner ridges of the GaAs layer and confined two-dimensionally by electrostatic fields. Wave functions of one-dimensional electrons in these quantum wires are analyzed and found to be efficiently squeezed. Features of electronic levels are clarified.
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