Abstract
AbstractThe p+ substrate plays an important role on the edge stability of p+n multiquantum well avalanche transit time devices. The p+n multiquantum well avalanche transit time devices on n+ substrate easily burn out along the device edge at low breakdown current. The same structure on p+ substrate can have the desired band diagram on device edge to eliminate edge burn‐out and CW operation is thus achieved at 100.3 GHz. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 196–197, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11326
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