Abstract
Data are presented demonstrating edge-emitting laser diode operation of AlyGa1−yAs– GaAs–InxGa1−xAs quantum well heterostructures modified by the formation of a buried native-oxide distributed Bragg reflecting (DBR) mirror adding vertical confinement to the longitudinal laser cavity. The bottom DBR mirror, combined with the highly reflective top p-contact metallization (Ag), forms a thin broadband vertical cavity. The auxiliary vertical mirrors are tuned to improve the coupling of the spontaneous emission to the longitudinal lasing mode, resulting in reduced threshold currents and modified emission characteristics below threshold.
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