Abstract
The fabrication and characteristics of edge-emitting microlasers with deeply etched distributed Bragg reflector (DBR) mirrors are presented. Using reactive ion etching, the mirrors are formed at both cavity ends of a ridge waveguide laser with an GaInAs-AlGaAs single-quantum-well active layer. The devices have continuous-wave threshold currents as low as 2 and 6 mA at cavity lengths of 80 and 40 μm, respectively. Lasing operation is achieved down to a length of 28 μm. Diffraction limited reflectivities >75% are obtained for third-order gratings, with two DBR periods.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
