Abstract
New results on edge effects in narrow-width MOSFETs as a function of the gate bias are presented. It was found that the value of the effective channel width, the current through the edge region, and the absolute value of the parasitic parallel conductance all increased with gate bias. These parameters were extracted from the experimental measurements by new techniques, which are described.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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