Abstract
The edge-defined, film-fed growth (EFG) technique was applied to the growth of silicon ribbons. An investigation of various graphite and silicon carbide coated graphite dies indicated that high density (>1.9 gm/cm 3), small grain size (<20 μ) graphite was physically suitable for the EFG process. Resultant silicon ribbons contained approximately 10 ppma carbon, 6–40 ppma oxygen, and lesser amounts of other impurities. Dislocation-free growth was demonstrated; however, in general, crystallographic defects were a significant problem in this crystal growth investigation.
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