Abstract
The contribution covers results of numerical study based on conjugate heat transfer formulation of turbulent silicon melt convection in an industrial system for CZ Si-crystal growth of 100 mm diameter crystals. The computations have been performed using an eddy-resolving method treated as Implicit LES for two values of the emissivity from the melt free surface (0.25 and 0.3) and the crucible rotation rate of 2 and 5 rpm. The effects of these parameters on melt convection and characteristics of heat transfer are analyzed.
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