ECV Profiling of Ultra-Shallow Junction Formed by Plasma Doping

Abstract

Electrochemical capacitance-voltage (ECV) technique has been employed in profiling dopant concentration of ultra-shallow p+n junctions formed by plasma doping. The results show that the junction depth determined by ECV is in good agreement with that determined by secondary ion mass spectroscopy. The results also show that ECV is capable of characterizing pn junctions with junction depth down to 10 nm, and dopant concentration up to 1021 cm-3 with good controllability and repeatability. Its depth resolution can be down to 1 nm