Abstract
AlGaN/GaN high electron mobility transistor (HEMT) heterostructures were investigated by means of the electrochemical capacitance-voltage technique. The concentration profiles of free charge carriers across the samples were experimentally obtained. The features of 2D electron gas (2DEG) appearing in GaN HEMT in relation to spontaneous and piezoelectric polarization were described in detail, along with the factors affecting the density of free charge carriers in the channel and the performance of GaN HEMTs. The 2DEG density for various technological parameters of the interface, such as the mutual orientation of the AlGaN/GaN layers and AlxGai-xN composition, was calculated accounting for piezoelectric effects.
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