Abstract
ECR-MBE法による石英ガラス基板上多結晶GaNの結晶成長と特性評価( ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考)
Full Text
Sign-in/Register to access full text options
Published version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of the Japanese Association for Crystal Growth
Paper Title
Journal
Date