Abstract
TCAD software for device modeling, called ECORCE, is presented. ECORCE is based on a classical drift-diffusion model and is distributed under the GPL. It facilitates TCAD modeling by providing an easy-to-use graphical user interface for defining the geometry and physical model of the devices, executing calculations, and analyzing results. Furthermore, by integrating a dynamic mesh generator, ECORCE frees the user from the meshing step for either DC or transient analysis. ECORCE allows Single Event Effect modeling and features a restricted diffusion add-on that accounts for the kinetics of the trapping-detrapping process in insulators. This paper demonstrates that ECORCE models the Single Event Effect and Total Ionizing Dose response of MOS devices. Experimental results are modeled quantitatively.
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