Abstract
Beta-iron disilicide β-FeSi2 films were prepared on Si (100) substrates by laser ablation method using β-FeSi2 bulk crystals as target materials. XRD patterns of β-FeSi2 films on Si (100) substrates showed [110] orientation. Raman signals of β-FeSi2 films were observed at 171cm-1, 190cm-1, 199cm-1 and 247cm-1. Thestress between β-FeSi2 film and Si (100) substrate was estimated to be about 0.2 GPa. The optical absorptioncoefficient at 1.0 eV and energy band-gap were obtained to be 2.0×105cm-1 and 0.85 eV, respectively.
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