Abstract
Silicide-based thermoelectrics are examples of cost-efficient and environmentally friendly new energy materials, which can be used for power-generation applications in the range of 500-800 K. We review the research focusing on the exploration of n-type Mg2IV-based solid solutions (IV = Si, Ge and Sn) and summarize the most prominent discoveries achieved so far in their studies. Owing to their superior performance compared to other silicides, including p-type Mg2IV, higher manganese silicides (HMS) are commonly considered as a suitable p-type material to be used in thermoelectric modules in conjunction with n-type Mg2IV-based solid solutions for mid-temperature power-generation applications. We describe the strategies used to improve the thermal and electronic transport properties of n-type Mg2IV-based solid solutions and mention some key features of HMS. We also point out the importance of mechanical properties and thermal stability of this family of materials and offer perspectives on the future research work to further improve their performance.
Highlights
Thermoelectric (TE) energy conversion, which can achieve the direct and reversible conversion between heat and electricity, provides for a wide range of applications in the area of waste-heat recovery, refrigeration and high-precision temperature control [1,2]
Silicide-based thermoelectrics are examples of cost-efficient and environmentally friendly new energy materials, which can be used for power-generation applications in the range of 500–800 K
We review the research focusing on the exploration of n-type Mg2IV-based solid solutions (IV = Si, Ge and Sn) and summarize the most prominent discoveries achieved so far in their studies
Summary
Thermoelectric (TE) energy conversion, which can achieve the direct and reversible conversion between heat and electricity, provides for a wide range of applications in the area of waste-heat recovery, refrigeration and high-precision temperature control [1,2]. This section will focus on the preparation of Sn-based solid solutions, i.e. ternary Mg2Si1–xSnx and Mg2Ge1–ySny as well as quaternary Mg2Si1–x–yGexSny, due to their excellent TE performance These Sn-based solid solutions possess a superior TE performance to Mg2Si1–xGex, which is due to some favorable features in the band structure and a greater mass contrast between Si and Sn than between Si and Ge, resulting in a lower lattice thermal conductivity [67]. Successful preparation of binary Mg2IV should avoid phase non-uniformity in the final product due to insufficiently reacted constituent elements, while, in addition to this requirement, the fabrication of Sn-based ternary and quaternary solid solutions requires an appropriate annealing temperature and holding time to promote the formation of a solid solution between the binary components.
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