Abstract
In this paper, a nontoxic and environmentally friendly water-driven (WD) route to prepare InZnO thin films with various molar ratio of In and Zn has been reported. The formation mechanisms and physical properties of InZnO thin films as a function of element molar ratio are investigated by various characterization techniques. By comparing the performance of InZnO/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thin-film transistors (TFTs) at different element molar ratio, the results indicate that the molar ratio of 2:1 (In:Zn) is the optimal choice. Based on the optimal molar ratio, fully WD InZnO/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> TFT is fabricated and the excellent electrical properties are obtained at a low operating voltage of 5 V, including a higher field-effect mobility of 9.1 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> s <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> , a larger ON-/OFF-state current ratio of 1.5×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> , a smaller subthreshold swing of 0.09 V/dec, and a smaller threshold voltage shift of 0.44 V after 5400-s bias stressing, separately. Finally, to further validate the feasibility of InZnO TFTs in complex logic circuits, an inverter is assembled based on the InZnO/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> TFT, exhibiting a high gain of 8.8. More importantly, the excellent properties of InZnO/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> TFT are achieved at a low-voltage stage, which stands for the great application prospects of WD TFTs in low-cost and excellent performance electronic devices.
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