EBIC profiling of bevelled samples: A precise method to determine the position of p-n junctions and doping gradients

Abstract

EBIC profiling of bevelled p-n structures is a powerful method to determine the actual positions of p-n junctions and steep doping gradients with a precision up to ±100nm for slightly graded junctions ( a ⋍ 10 19cm -4 ) and ±20nm for one-sided abrupt junctions. Moreover, this method is capable to reveal the dependence of EBIC on reverse bias and beam current for each junction of p + -p-n structures separately and the following effects which were previously predicted could be confirmed: electric field quenching at the p-n junction due to high beam currents, and a p +-p-n space charge layer expansion with increasing reverse bias which is governed by p-n junction.