Abstract
A method for the quantitative evaluation of electron-beam-induced current (EBIC) profiles across p-n junctions (normal-collector configuration) is presented. The procedure consists of firstly estimating the extent of electron-hole (e-h) pair generation by Monte Carlo calculations. Secondly, the steady-state diffusion equation is applied to minority carriers in each differential volume to evaluate the minority carrier collection probability. The model is then used to investigate (λ = 1.3 μm) InGaAsP/InP double bulk heterostructure lasers. From the comparison of experimental and calculated linescans, the minority carrier diffusion length and surface recombination velocity are evaluated to be L = 0.52 μm and S/D = 1 × 10 5 cm −1 at n-side and L = 0.87 μm and S/D = 5 × 10 4 cm −1 at p-side.
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