Abstract
Grain boundary recombination phenomenon in laser-recrystallized silicon on insulator (SOI) polycrystalline silicon thin-film material has been measured using electron-beam-induced current (EBIC) technique. Unusual EBIC appearances are observed in the arsenic doped n+region. A channel-collection model, based on both experimental evidence and process simulation, is proposed to account for the phenomena. Based on this model, typical values of the effective grain-boundary recombination velocity in the n+region are found to be about 105cm/s where grain size is in the range of 1 to 5 µm.
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