Abstract
AbstracL The energy bands associated with dislocations in gallium arsenide create, even in the space charge region (SCR) of a Schottky diode, electric fields which can cancel the Schottky field near the dislocation line. Therefore, minority carriers created in these regions recombine at the dislocation line, giving rise to an EBIC contrast. Solution of Poisson's equation allows us to determine the variation of the dislocation capture radius with depth in the SCR, and to obtain a quantitative estimate of the EBIC contrast. The theoretical results in which saturation effects can be introduced are compared with experimental ones obtained on both a and fl dislocation types. This comparison leads us to conclude that the saturation effect is not efficient in GaAs, and we suggest that it is probably cancelled by a current flowing along the dislocation line.
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