EBIC Characterisation of Diffusion and Recombination of Minority Carriers in GaN-Based LEDs

Abstract

SummaryAs light emitting diodes are minority charge carrier devices, characterisation of diffusion and recombination of minority carriers in the various layers that compose such devices is essential. One of the best methods that can provide information on diffusion and recombination of minority carriers in semiconductor devices with high spatial resolution is cross-sectional electron beam induced current (EBIC) characterisation. It will be shown that dark defects can be observed in cross-sectional EBIC images, and that correlation with cathodoluminescence maps them as threading dislocations. A narrower depletion width and a longer minority carrier diffusion length are found at dislocation sites in p GaN.