Abstract
Mesa etched p +n 6H-SiC diodes were investigated using EBIC. The EBIC signal was analysed using TMA Medici and Monte Carlo simulations. Space charge characteristics obtained from EBIC and static device simulations were compared. Surface charge density and minority carrier lifetime of the low doped n-type region were determined. The charge generation volume is described by an analytical approximation based on calculations using single scattering Monte Carlo simulation code. Results show large positive surface charge density of the order of 1×10 13 q/cm 2 present at the n-type SiC/SiO 2 interface. A common origin of the surface charge on n- and p-type SiC is suggested. The EBIC method, combined with simulation tools, was confirmed to be a valuable diagnostic tool for study of the junction termination and passivation in SiC devices.
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