Abstract
A fast-switching TiO2/SnO2 heterostructure thin-film (TF) photodetector synthesized by electron beam evaporation technique is analyzed in this study. The substrate utilized is n-type silicon (Si), while gold (Au) is employed as the top electrode. To assess sample morphology and confirm elemental composition, field emission scanning electron microscopy (FESEM), energy dispersive x-ray spectroscopy (EDS), and chemical mapping were conducted. Structural characteristics were determined using X-ray diffraction (XRD) analysis. The XRD analysis confirmed the presence of various phases of TiO2 (anatase and rutile) and SnO2 (rutile). UV-Vis spectroscopy revealed multiple absorption peaks, at 447 nm, 495 nm, 560 nm, and 673 nm, within the visible spectrum. The device demonstrates high detectivity (D∗) of 1.737×109 Jones and a low noise equivalent power (NEP) of 0.765×10−10W. Evaluation of the device’s switching response through current-time characteristic (I-T) analysis indicates rapid switching with a rise time and fall time of 0.33 s and 0.36 s, respectively.
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