Abstract
This work describes the micro-fabrication process developed to manufacture nano-interdigital transducers (nano-IDTs) to be used in surface acoustic wave applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating IDT finger patterns with a line width below 100 nm and good yield. It is also shown how a very thin organic anti-static layer can be used to avoid charge accumulation on the resist layer during e-beam lithography, which is easy to occur on insulating piezoelectric substrates and results in e-beam deflection. However, it is also shown how the use of this anti-static layer is not required with the insulating piezoelectric layer resting on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on insulating and semiconducting layers is also discussed.
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