Abstract
Tin‐based chalcogenide semiconductors, though attractive materials for photovoltaics, have to date exhibited poor performance and stability for photoelectrochemical applications. Here, a novel strategy is reported to improve performance and stability of tin monosulfide (SnS) nanoplatelet thin films for H2 production in acidic media without any use of sacrificial reagent. P‐type SnS nanoplatelet films are coated with the n‐CdS buffer layer and the TiO2 passivation layer to form type II heterojunction photocathodes. These photocathodes with subsequent deposition of Pt nanoparticles generate a photovoltage of 300 mV and a photocurrent density of 2.4 mA cm−2 at 0 V versus reversible hydrogen electrode (RHE) for water splitting under simulated visible‐light illumination (λ > 500 nm, P in = 80 mW cm−2). The incident photon‐to‐current efficiency at 0 V versus RHE for H2 production reach a maximum of 12.7% at 575 nm with internal quantum efficiency of 13.8%. The faradaic efficiency for hydrogen evolution remains close to unity after 6000 s of illumination, confirming the robustness of the heterojunction for solar H2 production.
Highlights
The incident photon-to-current efficiency at 0 V versus RHE for H2 production reach a maximum of 12.7% at 575 nm with internal quantum efficiency of 13.8%
The faradaic efficiency materials from IV to VI groups have emerged as one such group of promising light-absorber materials for photoelectrochemical (PEC) applications because of their narrow bandgap, earth abundance, for hydrogen evolution remains close to unity after 6000 s of illumination, and low materials processing cost.[15,16]
Poor film quality and instaverting photon energy in sunlight to chemical potential energy bility in the PEC environment of the cell have so far limited by producing molecular products, which can be later used as their application to systems with sacrificial reagents.[24,25]
Summary
SnS films of a thickness of ≈600 nm were sufficient to absorb all incident light with wavelengths
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