Abstract
The relationship between the surface state and vibration characteristics of Si cantilever was examined. Surface treatment of Si cantilever was carried out by reactive ion etching (RIE) using CF_4, Ar and O_2 gases. It was found that the Q factors increased when we used CF_4 gas, and they decreased when we used Ar or O_2 gas. The changes in chemical bond state were measured by the X-ray photoelectron spectroscopy (XPS). In addition, the surface free energy of the cantilever was measured. As a result, lower surface free energies resulted in larger Q factors.
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Schedule a callMore From: Proceedings of International Conference on Leading Edge Manufacturing in 21st century : LEM21
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