Abstract
A ZnCdS/ZnSSe multi quantum well structure was grown by metal-organic vapor phase epitaxy on GaAs substrate. The structure is consisted of the 45 ZnCdS layers of 5 nm in thickness separated by the 100 nm thin ZnSSe barrier layers and was the type-II heterostructure. A microresonator was produced from this structure for scanning electron beam longitudinal pumping. Lasing with output power up to 2W at 478 nm was achieved at room temperature.
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