Abstract
This review describes general approaches for the simulation exposure and development stages of e-beam lithography (EBL). The general models of elastic and inelastic electron interactions with matter, which are used for the simulation of the EBL exposure stage, are presented. The empirical and theoretical models of the resist’s dissolution in wet developers are provided for the simulation of the EBL profile development stage. Also, the kinetic transport and Monte-Carlo simulation algorithms are described.
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