Abstract
The results of a photoreflectance spectroscopy study of Ga2Se3/n-GaAs samples prepared by long-term annealing of GaAs wafers (n≈1017 cm−3) in a Se-vapor atmosphere are presented. It was established that no photovoltage appears in the interface region of these structures under illumination. Photogeneration of the charge carriers in the substrate does not lead to a change in the Fermi level position at the interface, with only the depth of the space-charge region being modulated. The quantitative analysis of the spectra also indicates that the growth of a thick (∼ 1 µm) Ga2Se3 layer does not result in the expected shift of the Fermi level position in comparison to the natural oxide-covered surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
