Abstract
A new bubble garnet composition containing dysprosium (DySmLuBiCa)3(FeGe)5O12 has been investigated for use in 4-μm period ion-implanted contiguous disk (CD) devices. The most significant property of the material is its low value of difference in magnetostriction constants, δλ(=λ100−λ111=+1.4×10−6). The low δλ is attained by substituting Dy ions into the dodecahedral sites. The Gilbert damping parameter α is moderate. The present Dy-containing garnet showed several favorable characteristics with respect to bubble propagation in 4-μm period He+ implanted CD devices. Those characteristics are (1) small minimum drive field, (2) suppression of bubble jumping to adjacent CD ‘‘good’’ tracks, even in 6-μm loop period, (3) smooth followup of bubble positions to drive field directions, and so on. These characteristics in bubble propagation along CD tracks are interpreted by the in-plane magnetization reversal at the pattern edge, which is related to δλ and stress relief. Smaller δλ decreases threefold symmetric behavior of charged wall movement along pattern edges.
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