Abstract

The experiment of stimulating fluorine to desorb from fluorinated graphene was carried out in order to make clear the dynamical mechanism of the electron-stimulated desorption (ESD) of fluorine. X-ray photoelectron spectroscopy (XPS) with an electron beam gun accessory was used not only to stimulate fluorine to desorb, but also to characterize the concentration of fluorine after ESD. The concentration of fluorine dropped quickly following electron beam irritation. The desorption cross section of fluorine is about 1.5×10-17 cm2. It was also found that electron beam with low current density did not damage the structure of fluorinated graphene. These results confirm that it is feasible to fabricate all graphene electronics by ESD technology.

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