Abstract
Time resolved imaging has been used to analyze structural transformations induced by intense 100 fs laser pulses in amorphous GeSb films. Above a threshold of 19 mJ/ ${\mathrm{cm}}^{2}$ the data show the formation of a transient nonequilibrium state of the excited material within 300 fs. The results are consistent with an electronically induced, amorphous-to-crystalline phase transition.
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