Abstract

We analyze the general features of the formation and interaction of transverse traveling waves and the appearance of filamentation in broad area semiconductor lasers with current profiling. For small apertures, the emitted profile is symmetric consisting of two counterpropagating transverse traveling waves, both emanating from the center of the device. For larger apertures, the emission becomes asymmetric as one of the traveling waves expands to occupy an increased area while the other occupies the remaining, smaller spatial region. In both devices, the pattern becomes unstable at higher injection currents due to optical filamentation, although an intermediate state is present in the wider device whereby the dominant wave undergoes a Hopf bifurcation before filamentation occurs.

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