Abstract
We report a time-resolved photoluminescence study for GaInNAs and GaNAsSb p-i-n bulk solar cells grown on GaAs(100). In particular, we studied the extent to which the carrier lifetime decreases with the increase of N content. Rapid thermal annealing proved to significantly increase the decay times by a factor of 10 to 12 times, for both GaInNAs and GaNAsSb heterostructures, while for the 1-eV bandgap GaNAsSb structure, grown at the same growth conditions as the GaInNAs, the photoluminescence decay time remained slightly below 100 ps after annealing; the approximately 1.15-eV GaInNAs p-i-n solar cell exhibited a lifetime as long as 900 ps.PACS78.47.D; 78.55.Cr; 88.40.hj
Highlights
In recent years, multijunction III-V semiconductor solar cells have experienced remarkable improvements, for space applications and for terrestrial concentrated photovoltaic systems
A very promising way to further improve the performance of solar cells is to utilize dilute nitride and dilute antimonide materials, which can be grown lattice matched onto GaAs and Ge substrates [2]
A conversion efficiency of 44% was reported for a triple junction solar cell including a bottom junction based on GaInNAs(Sb) grown by molecular beam epitaxy (MBE) [3]
Summary
Multijunction III-V semiconductor solar cells have experienced remarkable improvements, for space applications and for terrestrial concentrated photovoltaic systems. The highest photovoltaic conversion efficiency reported so far is 44.7% and has been obtained with four junction solar cell [1]. A very promising way to further improve the performance of solar cells is to utilize dilute nitride and dilute antimonide materials, which can be grown lattice matched onto GaAs and Ge substrates [2]. These materials provide suitable absorption bands to harvest photons down to 1 eV and even below. A conversion efficiency of 44% was reported for a triple junction solar cell including a bottom junction based on GaInNAs(Sb) grown by molecular beam epitaxy (MBE) [3].
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