Dynamics of the transition resistance of Al–(Ti, Ni, Mo)–Si type contacts under conditions of non-stationary electrical loads

Abstract

This paper analyses the behavioral features of ohmic contacts under the conditions of traditional isothermal annealing. The purpose of this paper is to study the value change of the semiconductor contact resistance when applying electric current pulses of different powers. For the experiments, structures were formed of metal-sublayer-semiconductor wafer Al–(Ti, Ni, Mo)–Si. The quality control of the deposited films was carried out microscopically by the four-probe method. The presented results indicate the solid-phase interaction of components during diffusion annealing Si–Me–Al thin-film systems. This rearrangement of atoms, which occurs with grain-boundary diffusion, significantly affects the electrical and thermal characteristics of the formed contacts. The novelty of the paper is that the optimal parameters of a rectangular current pulse were selected, which made it possible to reduce the value of the transition resistance by 1.6 times.