Dynamics of T-site muonium states in gallium phosphide

Abstract

Abstract We report on the motional dynamics of Mu - and the ionization processes related to the Mu T acceptor state in n-type gallium phosphide. Muon spin resonance results on semi-insulating GaP suggest the presence of both Mu + and Mu - diamagnetic states above ∼ 400 K . From the growth step in the RF amplitudes, we obtain an energy of ∼ 0.82 eV for the Mu T acceptor-related hole ionization. The loss of the Mu - RF-component above 600 K yields an energy of ∼ 1.7 eV , which is assigned to thermal promotion of an electron from Mu - to the conduction band. These two results locate the Mu T acceptor level with respect to the valence and conduction band edges, respectively. Low-field spin precession and zero-field depolarization data on n-type GaP show a peak in diamagnetic fraction below 300 K, and a roughly linear increase in amplitude at higher temperatures.