Dynamics of surface dislocation ensembles in silicon under conditions of mechanical and magnetic perturbations

Abstract

This paper reports on the results of investigations into the dynamics of surface dislocation ensembles in silicon under conditions of mechanical and magnetic perturbations. The motion of defects is described with due regard for barriers of three types, including magnetically sensitive point defects and dislocations. Within the concept of spin-dependent reactions between structural defects, a kinetic model is proposed for the magnetic-field-stimulated changes observed in the dislocation mobility due to the formation of long-lived complexes involving paramagnetic impurities. It is experimentally proved that the preliminary treatment of dislocation-containing crystals in a magnetic field (B=1 T) for 5–45 min leads to an increase in the velocity of dislocations in n-Si and p-Si samples by factors of two and three, respectively. The magnetic memory effect is observed in dislocation-containing silicon crystals. Consideration is given to the decay kinetics of the magnetic memory during storage of the silicon samples under natural conditions after magnetic treatment. The basic quantitative characteristics of the motion of linear defects in a magnetic field (for example, the partial velocities of dislocations, the dynamics of dislocation segments at stoppers of different types, and the expectation times for the appearance of the appropriate stoppers) are determined by fitting the experimental data to the theoretical results.