Abstract
Self-pulsing in passively Q-switched microchip lasers is investigated in detail. The typical range of values of the parameters motivates a new analysis of the laser rate equations. We determine basic properties of the laser intensity oscillations such as threshold conditions, repetition rate, pulsewidth, peak power, and pulse energy. We show that these oscillations appear through a quasi-vertical Hopf bifurcation located slightly above the lasing threshold. Our bifurcation results are verified numerically by modeling a microchip laser experiment with Nd:YAG as the gain medium and YAG:Cr as saturable absorber. Our results agree with the experiment to within 10%.
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