Abstract
Negative diffusivity and uphill diffusion, that contrast with Fick’s laws, however which can occur in multicomponent and single systems. In this paper, authors present studied results about the dynamics of the uphill diffusion in ternary and single system. Results have shown that: i) in ternary systems, the dynamics of negative diffusivity is high concentration effect and the combina-tion of coupled diffusion effect with high concentration effect is the dynamics of uphill diffusion; ii) in single systems, the difference of temperatures in two areas that is the dynamics of negative diffusivity and uphill diffusion. Keywords: Dynamics of uphill diffusion; dynamics of negative diffusivity.
Highlights
In uphill diffusion, the diffusion flux goes up to the higher concentration area, which often occurs in multicomponent systems [1,2,3,4,5,6]
Eq.5 shows that: diffusion flux of interstitial does not depend on its concentration gradient, but depends on concentration gradient of boron
Calculated result of mutual diffusivity DIB is presented in Tab.1, which shows that when boron concentration is high (CB = 1018 ÷ 1019), mutual diffusivity of interstitial becomes negative
Summary
The diffusion flux goes up to the higher concentration area, which often occurs in multicomponent systems [1,2,3,4,5,6]. Authors apply the irreversible thermodynamics theory to treat dynamics of negative diffusivity and uphill diffusion in ternary system of boron and point defects (interstitial and vacancy) in silicon and single component system. Based on irreversible thermodynamics [9], the diffusion of boron (B) and point defects (interstitial (I) and vacancy (V)) in silicon can be described. Eq. shows that: diffusion flux of interstitial does not depend on its concentration gradient, but depends on concentration gradient of boron (that is coupled diffusion effect). Calculated result of mutual diffusivity DIB is presented in Tab., which shows that when boron concentration is high (CB = 1018 ÷ 1019), mutual diffusivity of interstitial becomes negative (that is high concentration effect). The combination of the coupled diffusion effect with high the concentration effect is the dynamics of uphill diffusion of interstitial in silicon
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