Abstract
A semi-analytic model of collisionless sheath in plasma immersion ion implantation (PI/sup 3/) for a step bias with finite rise time in cylindrical geometry has been developed. The model takes into account the formation of the presheath, predicts the sheath overshooting and its further recovery to the steady-state Child value. To verify the model, a sheath dynamics has been investigated experimentally on a 30-kV PI/sup 3/ setup using the positively biased Langmuir probe technique. The measurements have been carried out in argon and helium plasmas of inductively coupled and hot cathode plasma sources. The model predictions agreed well with the experimental results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
