Abstract
surface of Si(111) wafers was studied as a function of annealing time at relatively low annealing temperatures (50 and 100 °C) by application of scanning force microscopy. A fast increase in cluster diameter and height as a function of annealing time was detected. After more than 3 h of annealing depletion zones and nucleation exclusion zones were observed.
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Schedule a callMore From: Applied Physics A: Materials Science & Processing
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