Abstract
A physicomathematical model for calculating the dynamics of the electron-hole plasma in semiconductor opening switches for ultradense currents is developed. The model takes account of the real doping profile of a semiconductor p +-p-n-n + structure and the following elementary processes in the electron-hole plasma: current-carrier diffusion and drift in high electric fields, recombination on deep impurities and Auger recombination, and collisional ionization in a dense plasma. The electrical pumping circuit of the opening switch is calculated by solving the Kirchhoff equations. The motion of the plasma in the semiconductor structure is analyzed on the basis of the model. It is shown that for ultrahigh pumping levels the interruption of the current in the opening switch occurs in the heavily doped regions of the p +-p-n-n + structure and is due to saturation of the particle drift velocity in high electric fields.
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