Abstract

AbstractThe dynamics of carrier hopping in band tails of a quasi‐one‐dimensional (QOD) system is studied in the presence of temperature and electic field. A method is used in which it is assumed that localized states are distributed randomly in both space and energy coordinates and the hopping of carriers occurs in both coordinates. The exponential form of the density of states for band tails is considered. The hopping rate and the time dependent demarcation energy are calculated in the activated and nonactivated relaxation regimes. The hopping rate varies with the electric field as (1  β2)−1/γ and exp [(1  β2)] for the AR and the NAR regions, respectively. Here β and γ are directly proportional to the electric field and the temperature, respectively. Numerical calculations are performed for the hopping rate and the demarcation energy as a function of β and γ for both regions.

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