Abstract
Time-resolved as well as time-integrated photoluminescence measurements at 4.2 K have been performed on compensated high-resistivity CdTe single crystals doped with a low indium concentration (less than 1×10 16 cm −3). Three kinds of bound excitons, a neutral donor and a neutral acceptor bound excitons, and a defect related bound exciton, were observed with a Lorentzian line shape in the near-band edge region. The radiative recombination lifetimes of these bound excitons are 400, 1460 and 2560 ps, respectively. These values agree well with theoretical values, which are estimated by using Rashba and Gurgenishvili theory. Full time evolutions of these bound excitons were also analyzed by a set of rate equations.
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