Dynamics and instability of solid-state dewetting

Abstract

Abstract Spontaneous dewetting of solid thin films proceeds by edge retraction of film edges and/or by heterogeneous void growth. Classical 1D and 2D continuous models of the evolution of a dewetting film, based on surface diffusion mechanisms, predict that in the long-time limit dewetting obeys universal scaling laws. In this paper, we review 1D and 2D predictions and recent experimental results. For this purpose, using Si(001)/SiO2 and Ge(001)/SiO2 single-crystalline thin films in different geometries, we have been able to compare theoretical predictions to experimental results obtained by combining in situ LEEM and ex situ AFM measurements. For dewetting from film edges, experimental results partially differ from continuous models predictions. More precisely, because of the crystallographic anisotropy: (i) the facetted edges remain stable during dewetting (they simply recede at constant shape) while poorly or un-facetted edges are unstable (they recede by finger formation); (ii) rim formation, induced by mass-conservation condition, proceeds in a layer-by-layer mode and is limited by 2D nucleation properties on the top of the rim; (iii) the island generation mechanism differs from the mass shedding behaviour predicted by 1D models. For dewetting mechanisms involving void growth, different behaviours are reported and discussed. For thin Si(001)/SiO2 films, the corners of the opening square-shaped voids lead to a local destabilisation of the growing voids. For thin Ge(001)/SiO2 films, the side of the voids invariably turns instable and forms tip dendrites whose branch density depends on the temperature and the initial film thickness. Finally, ultra-thin films, more sensitive to local fluctuations, dewet in a fractal geometry.