Abstract
A new matrix representation of the dynamical theory of x–ray diffraction which treats asymmetric reflections of coherent (i.e., pseudomorphic) epitaxial single crystal structures has been applied to III–V semiconductor multilayer structures. The laminar approximation is made, and Maxwell‘s equations are integrated in a 8 x 8 matrix form for the sublayers. Diffraction profiles from any multilayer can be obtained by multiplying the sublayer matrices. The method was used to simulate on a computer the intrinsic reflecting power of hypothetical structures in order to probe theoretical sensitivity limits for thin layers. We investigated [100] oriented structures consisting of single In ( l–x )Ga (x)As(l–y)P(y) quaternary (Q) layers on InP substrates as well as double heterostructures (DH‘s) consisting of a thin Q layer sandwiched between an InP substrate and an InP cladding layer.
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