Abstract
The authors report the observation of a dynamical screening effect of ionized impurities between two inversion layers separated by a doped 200 A barrier. They performed low temperature Shubnikov-de Haas and quantum Hall effect measurements in a GaAs-AlGaAs-GaAs double heterostructure. At low magnetic fields a density enhancement of one layer not only results in a mobility enhancement of the layer itself but also in a mobility enhancement of the other electron layer lying on the opposite side of the barrier. A fit to theoretical mobility calculations provides a conclusive illustration of this effect. At high magnetic fields this screening effect is shown by an unusual linewidth variation of the SdH oscillations due to an oscillatory polarizability and hence screening of the two-dimensional electron gases.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
